MMBD4448HCQW /AQW
/ADW /CDW /SDW /TW
Document number: DS30153 Rev. 18 - 2
2 of 4
www.diodes.com
July 2012
? Diodes Incorporated
MMBD4448HCQW /AQW
/ADW /CDW /SDW /TW
Maximum Ratings
(@TA
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
VRM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
80 V
RMS Reverse Voltage
VR(RMS)
57 V
Forward Continuous Current (Note 5)
IFM
500 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
IFSM
4.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
PD
200 mW
Thermal Resistance Junction to Ambient Air (Note 5)
RθJA
625 °C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics
(@TA
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 6)
V(BR)R
80
?
V
IR
= 100μA
Forward Voltage
VF
0.62
?
?
?
0.72
0.855
1.0
1.25
V
IF
= 5.0mA
IF
= 10mA
IF
= 100mA
IF
= 150mA
Reverse Current (Note 6)
IR
?
100
50
30
25
nA
μA
μA
nA
VR
= 70V
VR
= 75V, T
J
= +150°C
VR
= 25V, T
J
= +150°C
VR
= 20V
Total Capacitance
CT
?
3.5 pF VR
= 6V, f = 1.0MHz
Reverse Recovery Time
trr
?
4.0 ns VR
= 6V, I
F = 5mA
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our w
ebsite at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0
50
100
150
200
250
0140
80
20160
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
T , AMBIENT TEMPERATURE ( C)A
°
Figure 1 Power Derating Curve, Total Package
Note 5
10
100
1,000
1
0.1
0
1.6
1.2
0.4 0.8
I, INS
T
AN
T
ANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)F
Figure 2 Typical Forward Characteristics
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